Infineon introduces the 650 V CoolMOS™ CFD7A in QDPAK package for energy-efficient fast electric vehicle charging

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands its 650 V CoolMOS™ CFD7A portfolio by introducing the QDPAK package. This package family is designed to provide equivalent thermal capabilities with improved electrical performance over the well-known TO247 THD devices, thus enabling efficient energy utilization in onboard chargers and DC-DC converters.

Efficient and powerful electric vehicle charging systems help reduce charging times and vehicle weight, increasing design flexibility and reduce the total cost of ownership of the vehicle. This new addition complements the existing CoolMOS CFD7A series, offering versatility with top-side and bottom-side cooled packages. The QDPAK TSC (top side cooled), enables designers to achieve higher power densities and optimal PCB space utilization.

The 650 V CoolMOS CFD7A offers several important features for reliable operation in high-voltage applications. Thanks to its reduced parasitic source inductance, the device can minimize electromagnetic interference (EMI), ensuring clear signals and consistent performance. The Kelvin source pin also provides improved precision for current sensing, ensuring accurate measurements even in challenging conditions. With a creepage distance suitable for high voltage applications, as well as high current capability and high power dissipation (P _tot) of up to 694 W at 25°C, it is a versatile and powerful device for a wide range of high-voltage applications.

New system designs using 650 V CoolMOS CFD7A in QDPAK TSC will maximize PCB space use, doubling power density and enhancing thermal management via substrate thermal decoupling. This approach simplifies assembly, eliminates board stacking and reduces the need for connectors, thereby lowering system costs. The power switch reduces thermal resistance by up to 35 percent, providing high power dissipation that outperforms standard cooling solutions.

This feature overcomes the thermal limitations of bottom side cooled SMD designs using FR4 PCBs, resulting in a significant boost in system performance. The optimized power loop design locates drivers near the power switch, improving reliability by reducing stray inductance and chip temperatures. Overall, these features contribute to a cost-effective, robust, and efficient system ideal for modern power needs.

As announced in February 2023, the QDPAK TSC package has been registered as a JEDEC standard for high-power applications, helping to establish a broad adoption of TSC in new designs with one standard package design and footprint. To further to accelerate this transition, Infineon will also release additional Automotive Qualified devices in QDPAK TSC for onboard chargers and DC-DC converters in 2024, such as 750 V and 1200 V CoolSiC™ devices.

Availability

The 650 V CoolMOS CFD7A is available in QDPAK package with two versions, top-side cooled (TSC) and bottom-side cooled (BSC). Both variants can be ordered now.

High-voltage superjunction MOSFET for automotive applications

Infineon’s silicon-based 650V CoolMOS™ high-voltage SJ power MOSFETs CFD7A are specifically optimized to meet the requirements for electric-vehicle applications such as on-board chargers, HV-LV DC-DC converters, and auxiliary power supplies. With more than 10 years of automotive experience, CoolMOS™ CFD7A combines highest quality going well beyond the AEC-Q101 standards with unrivalled technology expertise.

The CoolMOS™ CFD7A family is manufactured on the highly automated 300mm production line, which contributes to reach the zero-defect target in mass production while fulfilling the growing market demand.

Benefit from our 650V CoolMOS™ n-channel SJ MOSFETs CFD7A by making automotive applications more compact and higher performing. The technology offers highest reliability with automotive lifetime requirements and increased design flexibility and scalability.

Key features

• Battery voltages up to 475V without compromising on reliability standards
• Efficiency improvements in hard- and soft-switching topologies up to 98.4%
• Kelvin-source concept for further efficiency improvement
• Intrinsic fast body diode with -30% lower Q_rr compared to CoolMOS™ CFDA

Key benefits

• Highest reliability in the field meeting automotive lifetime requirements
• Enabling higher power density designs
• Scalable as designed for use in PFC and DC-DC stage
• Granular portfolio available

Key applications

• On-board charger
  • Hard-switching topologies (with SiC diode)
  • PFC boost stages
  • DC-DC stage of OBC
• HV-LV DC-DC converter
  • LLC or full-bridge phase shift (ZVS)
• Auxiliary power supplies

Making automotive applications more compact and higher performing

High power density for more compact designs

Boosting efficiency to the next level, CoolMOS™ CFD7A shows improvements in hard- and resonant-switched topologies especially in light-load conditions. Higher switching frequencies can be achieved at gate-loss levels comparable to former generations; and this promising combination makes CFD7A one key enabler for decreased system weight and space to achieve more compact designs.

Highest reliability compliant with automotive lifetime requirements, increased design flexibility and scalability

 As a result of improved cosmic-radiation robustness, the CoolMOS™ CFD7A  technology allows applying  higher battery voltages at the same reliability rate as previous generations and other market offerings.

The CFD7A devices can be used in PFC and DC-DC stages thanks to the intrinsic fast body diode and the broad portfolio line-up.

Excellent efficiency and thermal performance

When using Infineon’s 650V CoolMOS™ CFD7A  technology in combination with the D²PAK 7-pin package customers benefit from enhanced efficiency and thermal behavior. As compared to the D²PAK 3-pin, the Kelvin-source concept used in the
D²PAK 7-pin (driver-source pin) overcomes the limitations caused by the source inductance and improves the switching performance. Resulting advantages at system level, especially at high currents, are the reduction of switching losses and heat. Furthermore, the increased creepage distance of 4.2mm between drain and source/gate facilitates device usage for higher battery voltage classes up to 475V.