News
Infineon advances automotive and industrial solutions with newly launched CoolSiC™ MOSFET 750 V G1 product family
29/02/2024Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the 750V G1 discrete CoolSiC™ MOSFET to meet the increasing demand for higher efficiency and power density in industrial and automotive power applications. The product family includes both industrial-graded and automotive-graded SiC MOSFETs that are optimized for totem-pole PFC, T-type, LLC/CLLC, dual active bridge (DAB), HERIC, buck/boost, and phase-shifted full bridge (PSFB) topologies. The MOSFETs are ideal for use in both typical industrial applications, such as electric vehicle charging, industrial drives, solar and energy storage systems, solid state circuit breaker, UPS systems, servers/ datacenters, telecom, and in the automotive sector, such as onboard chargers (OBC), DC-DC converters, and many more.
The CoolSiC MOSFET 750 V G1 technology features excellent RDS (on) x Q fr and superior RDS (on) x Q oss Figure-of-Merits (FOMs), resulting in ultra-high efficiency in hard-switching and soft-switching topologies respectively. Its unique combination of high threshold voltage (V GS(th), Typ. of 4.3 V) with low Q GD/Q GS ratio ensures high robustness against parasitic turn-on and enables unipolar gate driving, leading to increased power density and low cost of the systems. All devices use Infineon’s proprietary die-attach technology which delivers outstanding thermal impedance for equivalent die sizes. The highly reliable gate oxide design combined with Infineon’s qualification standards delivers robust and long-term performance.
With a granular portfolio ranging from 8 to 140 mΩ RDS (on) at 25°C, this new CoolSiC MOSFET 750 V G1 product family meets a wide range of needs. Its design ensures lower conduction and switching losses, boosting overall system efficiency. Its innovative packages minimize thermal resistance, facilitate improved heat dissipation, and optimize in-circuit power loop inductance, thereby resulting in high power density and reduced system costs. It’s important to note that this product family features the cutting-edge QDPAK top-side cooled package.
Availability
The CoolSiC MOSFET 750 V G1 for automotive applications comes in QDPAK TSC, D2PAK-7L, and TO-247-4 packages, while for industrial applications, QDPAK TSC and TO-247-4 packages are offered.
650 V up to 2000 V CoolSiC™ MOSFET discretes ideally suited for hard- and resonant-switching topologies
Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC™ MOSFET portfolio comes in 650 V, 750 V, 1200 V, 1700 V and 2000 V voltages classes, with on-resistance ratings from 7 mΩ up to 1000 mΩ. CoolSiC™ trench technology enables a flexible parameter-set, which is used for implementation of application-specific features in respective product portfolios, e.g.: gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.
Our range of 650 V CoolSiC™ MOSFETs offer optimized switching behaviors at high currents and low capacitances and are designed for a variety of industrial applications including, servers, telecom, motor drives, and more. The 750 V and 1200 V MOSFET range is available for both industrial and automotive qualified applications, such as on-board charger/PFC, auxiliary inverters, and uninterruptible power supply (UPS). The selection of 1700 V CoolSiC™ MOSFET is offered with flyback typology that can be used in energy storage systems, fast EV charging, power management (SMPS, and solutions for solar energy systems. Lastly, the 2000 V CoolSiC™ MOSFET offers increased power density and voltage margin, designated for high voltage applications such as fast EV charging, and solutions for solar energy systems.
CoolSiC™ MOSFETs in discrete packages are ideally suited for both hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies, and DC-DC converters or DC-AC inverters. An excellent immunity against unwanted parasitic turn-on effects creates a benchmark in low dynamic loss, even at zero volt turn-off voltage in bridge topologies. Our TO- and SMD offering comes also with Kelvin-source pins for optimized switching performance.
We complete the SiC discrete offering with a range of selected driver IC products fulfilling the needs of the ultrafast SiC MOSFET switching feature. Together, CoolSiC™ MOSFETs and EiceDRIVER™ gate driver ICs leverage the advantage of SiC technology: improved efficiency, space, and weight savings, part count reduction, enhanced system reliability.
Highlights
CoolSiC™ MOSFETs in discrete housings come along with a fast internal freewheeling diode, thus making hard switching without additional diode chips possible. Due to its unipolar character, the MOSFETs show very low, temperature-independent switching and low conduction losses, especially under partial load conditions.
Our unique silicon carbide (SiC) CoolSiC™ MOSFET discrete products from 650 V up to 2000 V are ideally suited for hard- and resonant-switching topologies such as LLC and ZVS, and can be driven like an IGBT or CoolMOS™, using standard drivers. These robust devices offer superior gate oxide reliability enabled by state-of-the-art trench design, best-in-class switching and conduction losses, highest transconductance level (gain), threshold voltage of Vth = 4 V and short-circuit robustness.
SiC MOSFET 650 V and 1200 V Gate Driver ICs
Ultra-fast switching power transistors such as CoolSiC™ MOSFETs can be easier handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on Infineon’s coreless transformer technology are recommended as most suitable.
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