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STMicroelectronics boosts silicon power performance with automotive-grade MDmesh DM9 super-junction MOSFETs

26/03/2024
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Automotive-grade 600V/650V super-junction MOSFETs in STPOWER MDmesh DM9 AG series deliver superior efficiency and ruggedness for on-board chargers (OBCs) and DC/DC converter applications in both hard- and soft-switching topologies.

With outstanding RDS(on) per die area and minimal gate charge, the silicon-based devices combine low energy losses with outstanding switching performance, setting a new benchmark figure of merit. Compared to the previous generation, the latest MDmesh DM9 technology ensures a tighter gate-source threshold voltage (VGS(th)) spread that results in sharper switching for lower turn-on and turn-off losses.

In addition, body-diode reverse recovery is improved, leveraging a new optimized process that also increases the MOSFETs’ overall ruggedness. The diode’s low reverse-recovery charge (Qrr) and fast recovery time (trr) make the MDmesh DM9 AG series ideal for phase-shift zero-voltage switching topologies that demand the utmost efficiency.

The family offers a selection of through-hole and surface-mount packages that help designers achieve a compact form factor with high power density and system reliability. The TO-247 LL (long-lead) is a popular through-hole option that eases design-in and leverages proven assembly processes. Among the surface-mount packages, the H2PAK-2 (2 leads) and H2PAK-7(7 leads) are optimized for bottom-side cooling with thermal substrates or PCBs featuring thermal vias or other enhancement. HU3PAK and ACEPACK™ SMIT topside-cooled surface-mount packages are also available.

The first device in the new STPOWER MDmesh DM9 AG series is the STH60N099DM9-2AG, a 27A AEC-Q101 qualified N-channel 600V device in H2PAK-2, with 76mΩ typical RDS(on). ST will expand the family to provide a full range of devices, covering a broad range of current ratings and RDS(on) from 23mΩ to 150mΩ.

The state-of-the-art MDmesh DM9 super-junction power MOSFETs are ST’s latest fast-recovery diode MOSFET series, optimized for full-bridge phase-shifted ZVS topologies. These 600 and 650 V fast-recovery MOSFETs, including AEC-Q101-qualified devices for automotive applications, feature the best Figure of Merit (RDS(on) max x Qg) on the market, a very low recovery charge and time (Qrr, trr) and deliver up to 46% lower RDS(on) compared to the previous generation. The MDmesh DM9 series is available in a wide range of package options including TO-247 long leads, TO-220, H2PAK-2, TO-LL, PowerFLAT HV (8 x 8 mm) and SOT223-2. These power MOSFETs belong to the STPOWER family.

The first automotive grade device in the STPOWER MDmesh DM9 AG series is the STH60N099DM9-2AG, in H2PAK-2 package.

Applications

Ideal for equipment such as charging stations for electric vehicles, telecom data centers, 5G power stations, servers, solar inverters, UPS, and energy storage systems, on board chargers (OBC) and DC-DC converters for EV/HEV, the MDmesh DM9 series enables superior energy ratings with more robust performance and increased power density.

Charging stations for electric vehicles
Telecom data centers
5G Power Stations
Servers
Solar inverters
UPS and energy storage systems
On board charger (OBC)
DC/DC converter for EV/HEV

Product types

The MDmesh DM9 series offers an improved reduction of maximum drain-source on resistance compared to the previous technology (MDmesh DM6 series) by package type (TO-220, TO-LL, PowerFLAT 8×8 HV, and DPAK).

MDmesh DM9 versus DM6 series

Benefits

  • Increased level of power
  • Extremely high efficiency and increased power density
  • Improved system reliability and robustness
  • Higher operating frequencies and better thermal management
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